000			nam a22 a 4500
999			_c26570 _d26570
003			AR-SmCIES
005			20190115153206.0
008			180425s2016 gw a|||frfn|| 001 0 eng d
020			_a9783527334179
041			_aeng
044			_agw
080	0		_a620.3
245	0	0	_aResistive switching : _bfrom fundamentals of nanionic redox processes to memristive device applications / _cedited by Daniele Ielmini and Rainer Waser.
260	1		_aWeinheim, Germany : _bWiley-VCH, _cc2016.
300			_axviii, 755 p. : _bil. (principalmente col.), diagrs. ; _c24 cm.
504			_aIncluye bibliografía al final de cada capítulo e índice analítico.
505	0	0	_t1. Introduction to nanoionic elements for information technology / _rRainer Waser, Daniele Ielmini, Hiro Akinaga, Hisashi Shima, H.-S. Philip, Wong, Joshua J. Yang, and Simon Yu -- _t2. ReRAM Cells in the framework of two-terminal devices / _rE. Linn, M. Di Ventra, and Y. V. Pershin -- _t3. Atomic and electronic structure of oxides / _rTobias Zacherle, Peter C. Schmidt, and Mandfred Martin -- _t4. Defect structure of metal oxides / _rGiuliano Gregori -- _t5. Ion transport in metal oxides / _rRoger A. De Souza -- _t6. Electrical transport in transition metal oxides / _rFranklin J. Wong and Shriram Ramanathan -- _t7. Quantum point contact conduction / _rJan van Ruitenbeek, Monica Morales Masis, and Enrique Miranda -- _t8. Dielectric breakdown process / _rJordi Suñé, Nagarajan Raghavan, and K. L. Pey -- _t9. Physics and chemistry of nanoionic cells / _rIlia Valov and Rainer Waser -- _t10. Electroforming processes in metal oxide resistive-switching cells / _rDoo Seok Jeong, Byung Joon Choi, Cheol Seong Hwang -- _t11. Universal switching behavior / _rDaniele Ielmini and Stephan Menzel -- _t12. Quasitastic and pulse measuring techniques / _rAntonio Torrezan, Gilberto Mederiros-Ribeiro, and Stephan Tiedke -- _t13. Unipolar resistive-switching mechanisms / _rLudovic Goux and Sabina Spiga -- _t14. Modeling the VCM- and ECM-Type Switching Kinetics / _rStephan Menzel and Ji-Hyun Hur -- _t15. Valence change observed by nanospectroscopy / _rChristian Lenser, Regina Dittmann, and John Paul Strachan -- _t16. Interface-type switching / _rAkihito Sawa and Rene Meyer -- _t17. Electrochemical metallization memories / _rMichael N. Kozicki, Maria Mitkova, and Ilia Valov -- _t18. Atomic Switches / _rKazuya Terabe, Tohru Tsuruoka, Tsuyoshi Hasegawa, Alpana Nayak, Takeo Ohno, Tomonobu Nakayama, and Masakazu Aono -- _t19. Scaling limits of nanoionic devices / _rVictor Zhirnov and Gurtej Sandhu -- _t20. Integration technology and cell design / _rFred Chen, Jun Y. Seok, and Cheol S. Hwang -- _t21. Reliability aspects / _rDirk J. Wouters, Yang-Yin Chen, Andrea Fantini, and Nagarajan Raghavan -- _t22. Select device concepts for crossbar arrays / _rGeoffrey W. Burr, Rohit S. Shenoy, and Hyunsang Hwang -- _t23. Bottom-up approaches for resistive switching memories / _rSabina Spiga, Takeshi Yanagida, and Tomoji Kawai -- _t24. Switch application in FPGA / _rToshitsugu Sakamoto, S. Simon Wong, and Young Yang Liauw -- _t25. ReRAM-based neuromorphic computing / _rGiacomo Indiveri, Eike Linn, and Stefano Ambrogio.
650	1	7	_2INIS _aNANOTECNOLOGIA _9288
650	1	7	_2INIS _aNANOELECTRONICA _9294
650	1	7	_2INIS _aCIRCUITOS ELECTRONICOS _9295
650	1	7	_2INIS _aCIRCUITOS DE CONMUTACION _9296
650	2	7	_2INIS _aCONDUCTIVIDAD ELECTRICA _9297
650	2	7	_2INIS _aMEMORIAS _9298
650	2	7	_2INIS _aDISPOSITIVOS DE MEMORIAS DE CAPA DELGADA _9289
650	2	7	_2INIS _aMEMORIAS MAGNETICAS _9290
650	2	7	_2INIS _aMEMORIAS DE SEMICONDUCTORES _9291
650	2	7	_2INIS _aMATERIALES _9104
650	2	7	_9292 _aINGENIERIA ELECTRICA _2inist
650	2	7	_2INIS _aFISICA DEL ESTADO SOLIDO _9293
653	1	0	_aMateria condensada _aReRAM
942			_2udc _cBK _h620.3