TY - BOOK TI - Resistive switching: from fundamentals of nanionic redox processes to memristive device applications / SN - 9783527334179 PY - 2016/// CY - Weinheim, Germany PB - Wiley-VCH KW - INIS KW - NANOTECNOLOGIA KW - NANOELECTRONICA KW - CIRCUITOS ELECTRONICOS KW - CIRCUITOS DE CONMUTACION KW - CONDUCTIVIDAD ELECTRICA KW - MEMORIAS KW - DISPOSITIVOS DE MEMORIAS DE CAPA DELGADA KW - MEMORIAS MAGNETICAS KW - MEMORIAS DE SEMICONDUCTORES KW - MATERIALES KW - INGENIERIA ELECTRICA KW - inist KW - FISICA DEL ESTADO SOLIDO KW - Materia condensada KW - ReRAM N1 - Incluye bibliografía al final de cada capítulo e índice analítico; 1. Introduction to nanoionic elements for information technology; Rainer Waser, Daniele Ielmini, Hiro Akinaga, Hisashi Shima, H.-S. Philip, Wong, Joshua J. Yang, and Simon Yu --; 2. ReRAM Cells in the framework of two-terminal devices; E. Linn, M. Di Ventra, and Y. V. Pershin --; 3. Atomic and electronic structure of oxides; Tobias Zacherle, Peter C. Schmidt, and Mandfred Martin --; 4. Defect structure of metal oxides; Giuliano Gregori --; 5. Ion transport in metal oxides; Roger A. De Souza --; 6. Electrical transport in transition metal oxides; Franklin J. Wong and Shriram Ramanathan --; 7. Quantum point contact conduction; Jan van Ruitenbeek, Monica Morales Masis, and Enrique Miranda --; 8. Dielectric breakdown process; Jordi Suñé, Nagarajan Raghavan, and K. L. Pey --; 9. Physics and chemistry of nanoionic cells; Ilia Valov and Rainer Waser --; 10. Electroforming processes in metal oxide resistive-switching cells; Doo Seok Jeong, Byung Joon Choi, Cheol Seong Hwang --; 11. Universal switching behavior; Daniele Ielmini and Stephan Menzel --; 12. Quasitastic and pulse measuring techniques; Antonio Torrezan, Gilberto Mederiros-Ribeiro, and Stephan Tiedke --; 13. Unipolar resistive-switching mechanisms; Ludovic Goux and Sabina Spiga --; 14. Modeling the VCM- and ECM-Type Switching Kinetics; Stephan Menzel and Ji-Hyun Hur --; 15. Valence change observed by nanospectroscopy; Christian Lenser, Regina Dittmann, and John Paul Strachan --; 16. Interface-type switching; Akihito Sawa and Rene Meyer --; 17. Electrochemical metallization memories /; Michael N. Kozicki, Maria Mitkova, and Ilia Valov --; 18. Atomic Switches; Kazuya Terabe, Tohru Tsuruoka, Tsuyoshi Hasegawa, Alpana Nayak, Takeo Ohno, Tomonobu Nakayama, and Masakazu Aono --; 19. Scaling limits of nanoionic devices; Victor Zhirnov and Gurtej Sandhu --; 20. Integration technology and cell design; Fred Chen, Jun Y. Seok, and Cheol S. Hwang --; 21. Reliability aspects; Dirk J. Wouters, Yang-Yin Chen, Andrea Fantini, and Nagarajan Raghavan --; 22. Select device concepts for crossbar arrays; Geoffrey W. Burr, Rohit S. Shenoy, and Hyunsang Hwang --; 23. Bottom-up approaches for resistive switching memories; Sabina Spiga, Takeshi Yanagida, and Tomoji Kawai --; 24. Switch application in FPGA; Toshitsugu Sakamoto, S. Simon Wong, and Young Yang Liauw --; 25. ReRAM-based neuromorphic computing; Giacomo Indiveri, Eike Linn, and Stefano Ambrogio ER -